Non-volatile, high-density integrated circuit memory

Details Non-volatile, high-density integrated circuit memory Non-volatile, high-density integrated circuit memory

2005-08-30

2005-08-30

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S096000

Reexamination Certificate

active

06937508

ABSTRACT:
A high density memory for use with integrated circuit technology is disclosed. The memory comprises one or more memory cells including a word line conductor, a via having a first resistive state and a second resistive state, and a bit line conductor. The bit line conductor has high conductance in a first state and low conductance in a second state. The via has high resistance in a first state and low resistance in a second state. The state of the via may be user-programmable. There maybe a plurality of word lines and bit lines arranged in overlying relationship with a plurality of vias disposed at the intersections of the word and bit lines. Because the memory cells do not rely on transistors formed in the substrate of the integrated circuit, multiple layers of word lines, vias, bit lines may be arranged to increase density.

REFERENCES:
patent: 6525953 (2003-02-01), Johnson
patent: 6646910 (2003-11-01), Bloomquist et al.
patent: 2003/0207486 (2003-11-01), Deak

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