Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2007-06-19
2007-06-19
Phung, Anh (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S194000
Reexamination Certificate
active
11135963
ABSTRACT:
A non-volatile memory cell100includes a static latch125having a first terminal and a second terminal, a first transistor124having a first current electrode coupled to said first terminal of said static latch125and a fusible element110having a first terminal coupled to a second current electrode of the first transistor125and a second terminal coupled to a first power supply voltage terminal. In a particular embodiment, the non-volatile memory cell includes a fusible element programming circuit140coupled to the first terminal of said fusible element. In another particular embodiment, the non-volatile memory cell includes a cell preset circuit120coupled to a control electrode of the first transistor.
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Boas Andre Luis Vilas
Olmos Alfredo
Freescale Semiconductor Inc.
Nguyen Hien N
Phung Anh
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