Non-volatile fuse circuit

Static information storage and retrieval – Read/write circuit – Having fuse element

Reexamination Certificate

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C365S194000

Reexamination Certificate

active

11135963

ABSTRACT:
A non-volatile memory cell100includes a static latch125having a first terminal and a second terminal, a first transistor124having a first current electrode coupled to said first terminal of said static latch125and a fusible element110having a first terminal coupled to a second current electrode of the first transistor125and a second terminal coupled to a first power supply voltage terminal. In a particular embodiment, the non-volatile memory cell includes a fusible element programming circuit140coupled to the first terminal of said fusible element. In another particular embodiment, the non-volatile memory cell includes a cell preset circuit120coupled to a control electrode of the first transistor.

REFERENCES:
patent: 5723999 (1998-03-01), Merritt
patent: 6031775 (2000-02-01), Chang et al.
patent: 6087889 (2000-07-01), Mok
patent: 6157583 (2000-12-01), Starnes et al.
patent: 6175261 (2001-01-01), Sundararaman et al.
patent: 6346845 (2002-02-01), Choi
patent: 6384664 (2002-05-01), Hellums et al.
patent: 6654304 (2003-11-01), Huang
patent: 6906557 (2005-06-01), Parker et al.

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