Non-volatile floating gate semiconductor device

Details Non-volatile floating gate semiconductor device Non-volatile floating gate semiconductor device

1994-06-30

1997-05-27

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257321, 257324, 257390, H01L 29788

Patent

active

056335199

ABSTRACT:
A MOS type semiconductor device comprising a protruded part provided on a semiconductor substrate, a semiconductor film formed on the side surface thereof, which is defined as a floating gate, and a gate electrode covered with the semiconductor film, is disclosed. In particular, a MOS memory device manufactured by providing a number of the above-mentioned semiconductor devices, by forming an impurity region on top of the protruded part of each semiconductor device, by forming a contact on the impurity region, and by providing a wiring that crosses a gate wiring, is described.

REFERENCES:
patent: 4774556 (1988-09-01), Fujii et al.
patent: 4929988 (1990-05-01), Yoshikawa
patent: 5017977 (1991-05-01), Richardson
patent: 5053842 (1991-10-01), Kojima
patent: 5071782 (1991-12-01), Mori
patent: 5078498 (1992-01-01), Kadakia et al.
patent: 5146426 (1992-09-01), Mukherjee et al.
patent: 5350937 (1994-09-01), Yamazaki et al.

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