Non-volatile floating gate memory cells with polysilicon...

Details Non-volatile floating gate memory cells with polysilicon... Non-volatile floating gate memory cells with polysilicon...

2008-04-08

2008-04-08

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE29129, C257SE29309

Reexamination Certificate

active

07355236

ABSTRACT:
Non-volatile floating gate memory cells with polysilicon storage dots and fabrication methods thereof. The non-volatile floating gate memory cell comprises a semiconductor substrate of a first conductivity type. A first region of a second conductivity type different from the first conductivity type is formed in the semiconductor substrate. A second region of the second conductivity type is formed in the semiconductor substrate spaced apart from the first region. A channel region connects the first and second regions for the conduction of charges. A dielectric layer is disposed on the channel region. A control gate is disposed on the dielectric layer. A tunnel dielectric layer is conformably formed on the semiconductor substrate and the control gate. Two charge storage dots are spaced apart from each other at opposing lateral edges of the sidewalls of the control gate and surface of the semiconductor substrate.

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Krivokapic et al., Quantum-well Memory Device (QWMD) with Extremely Good Charge Retention, IEDM, 2000, 185-188, IEEE.

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