Non-volatile flash semiconductor memory and fabrication method

Details Non-volatile flash semiconductor memory and fabrication method Non-volatile flash semiconductor memory and fabrication method

2007-01-02

2007-01-02

Schillinger, Laura M. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S331000

Reexamination Certificate

active

10991345

ABSTRACT:
In a semiconductor memory, a plurality of FinFET arrangements with trapping layers or floating gate electrodes as storage mediums are present on respective top sides of fins made from semiconductor material. The material of the gate electrodes is also present on two side walls of the fins, in order to form side wall transistors, and between the gate electrodes forms parts of a word line belonging to the corresponding fin.

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