Non-volatile flash memory having a specific difference...

Details Non-volatile flash memory having a specific difference... Non-volatile flash memory having a specific difference...

2005-04-12

2005-04-12

Abraham, Fetsum (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S317000, C257S318000

Reexamination Certificate

active

06878984

ABSTRACT:
A structure of a non-volatile flash memory, in which a punch-through current is suppressed and the area of a memory cell is reduced, is provided. The non-volatile flash memory being a NOR type non-volatile flash memory provides floating gates and a common source line, and drains. And at the structure of the non-volatile flash memory, a region overlapped one of the drains and one of the floating gates in a memory cell is larger than a region overlapped the common source and one of the floating gates in the memory cell.

REFERENCES:
patent: 5190887 (1993-03-01), Tang et al.
patent: 4-253374 (1992-09-01), None
patent: 6-140635 (1994-05-01), None
patent: 6-283721 (1994-10-01), None
patent: 7-211809 (1995-08-01), None
patent: 9-199617 (1997-07-01), None
patent: 2003-179171 (2003-06-01), None
M. Kato et al., “A Shallow-Trench-Isaolation Flash Memory Technology with a Source-Bias Programming Method”, 1996,IEEE Technical Digest of IEDM, pp. 177-180.

Affiliated with

Also associated with

Rating

Non-volatile flash memory having a specific difference... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-volatile flash memory having a specific difference..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile flash memory having a specific difference... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3373235