Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2007-08-14
2007-08-14
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S145000, C365S158000, C365S189070
Reexamination Certificate
active
11645160
ABSTRACT:
A ferromagnetic memory cell is disclosed having a base (21), oriented in a horizontal plane, a bit (19), made of a ferromagnetic material, and a sense/write line (20), positioned proximate the bit (19) sufficient to detect the directed polarity of the bit when a first current is applied thereto, and to direct the polarity of the bit when a second larger current is applied thereto in a given direction. The bit (19) has a height that is oriented perpendicular to the horizontal plane of the base, and a polarity that can be directed along the height.
REFERENCES:
patent: 4791604 (1988-12-01), Lienau et al.
patent: 5068826 (1991-11-01), Matthews
patent: 5295097 (1994-03-01), Lienau
patent: 5652445 (1997-07-01), Johnson
patent: 5654566 (1997-08-01), Johnson
patent: 5926414 (1999-07-01), McDowell et al.
patent: 6051441 (2000-04-01), McDowell et al.
patent: 6140139 (2000-10-01), Lienau et al.
patent: 6201259 (2001-03-01), Sato et al.
patent: 6229729 (2001-05-01), Lienau
patent: 6266267 (2001-07-01), Lienau
patent: 6288929 (2001-09-01), Lienau
patent: 6317354 (2001-11-01), Lienau
patent: 6330183 (2001-12-01), Lienau
patent: 6341080 (2002-01-01), Lienau et al.
patent: 6404671 (2002-06-01), Reohr et al.
patent: 6538921 (2003-03-01), Daughton et al.
patent: 6791869 (2004-09-01), Ooishi
patent: 6791890 (2004-09-01), Ooishi
patent: 6809959 (2004-10-01), Johnson
patent: 6873546 (2005-03-01), Lienau
patent: 6925029 (2005-08-01), Tsuji
patent: 7154776 (2006-12-01), Hidaka
Lienau Richard M.
Stephenson James Craig
Estancia Limited
Morgan & Lewis & Bockius, LLP
Nguyen Tuan T.
Pageant Technologies, Inc.
LandOfFree
Non-volatile ferromagnetic memory having sensor circuitry... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile ferromagnetic memory having sensor circuitry..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile ferromagnetic memory having sensor circuitry... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3837892