Non-volatile ferromagnetic memory having sensor circuitry...

Static information storage and retrieval – Systems using particular element – Magnetic thin film

Reexamination Certificate

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Details

C365S145000, C365S158000, C365S189070

Reexamination Certificate

active

11645160

ABSTRACT:
A ferromagnetic memory cell is disclosed having a base (21), oriented in a horizontal plane, a bit (19), made of a ferromagnetic material, and a sense/write line (20), positioned proximate the bit (19) sufficient to detect the directed polarity of the bit when a first current is applied thereto, and to direct the polarity of the bit when a second larger current is applied thereto in a given direction. The bit (19) has a height that is oriented perpendicular to the horizontal plane of the base, and a polarity that can be directed along the height.

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