Non-volatile ferroelectric memory device equipped with reference

Details Non-volatile ferroelectric memory device equipped with reference Non-volatile ferroelectric memory device equipped with reference

1996-09-24

1997-12-02

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365203, 365210, G11C 1122

Patent

active

056943539

ABSTRACT:
A non-volatile ferroelectric memory cell supplies electric charge from the ferroelectric capacitor to one of bit lines so as to rise the bit line to one of a first potential level representative of logic "1" level and a second potential level representative of logic "0" level, and a reference voltage generator generates a reference voltage level exactly adjusted to the mid point between the first potential level and the second potential level by supplying electric charge from a dummy memory cell storing a dummy data bit of logic "1" level and another dummy memory cell storing a dummy data bit of logic "0" level to the other of the bit lines and an adjacent bit line.

REFERENCES:
patent: 5430671 (1995-07-01), Hirand et al.
patent: 5572459 (1996-11-01), Wilson et al.
Tatsumi Sumi et al., "A 256kb Nonvolatile Ferroelectric Memory at 3V and 100ns", 1994 IEEE International Solid-State Circuits Conference, pp. 268-269.

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