Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2006-03-07
2006-03-07
Ho, Hoai (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S175000, C365S230030
Reexamination Certificate
active
07009865
ABSTRACT:
The present invention discloses a non-volatile ferroelectric cell array circuit using PNPN diode characteristics. The non-volatile ferroelectric cell array circuit includes a plurality of top sub cell arrays, a plurality of bottom sub cell arrays, a main bit line sense amp and a word line driving unit. Especially, the top and bottom sub cell arrays have a double bit line sensing structure for inducing a sensing voltage of a main bit line by controlling an amount of a current supplied from a power voltage to the main bit line according to a sensing voltage of a sub bit line receiving a cell data. Each of the sub cell arrays includes a ferroelectric capacitor, and a serial PN diode switch having a PNPN diode and a PN diode, to decrease a cell size and improve operational characteristics of the circuit.
REFERENCES:
patent: 5822240 (1998-10-01), Yoo
patent: 5926412 (1999-07-01), Evans et al.
patent: 6151241 (2000-11-01), Hayashi et al.
patent: 6256220 (2001-07-01), Kamp
patent: 6859088 (2005-02-01), Toyoda et al.
patent: 2003/0174532 (2003-09-01), Matsushita et al.
Heller Ehrman LLP
Ho Hoai
Hynix / Semiconductor Inc.
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