Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-04-02
2009-08-04
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S040000
Reexamination Certificate
active
07569880
ABSTRACT:
Under one aspect, a field effect device includes a gate, a source, and a drain, with a conductive channel between the source and the drain; and a nanotube switch having a corresponding control terminal, said nanotube switch being positioned to control electrical conduction through said conductive channel. Under another aspect, a field effect device includes a gate having a corresponding gate terminal; a source having a corresponding source terminal; a drain having a corresponding drain terminal; a control terminal; and a nanotube switching element positioned between one of the gate, source, and drain and its corresponding terminal and switchable, in response to electrical stimuli at the control terminal and at least one of the gate, source, and drain terminals, between a first non-volatile state that enables current flow between the source and the drain and a second non-volatile state that disables current flow between the source and the drain.
REFERENCES:
patent: 6256767 (2001-07-01), Kuekes et al.
patent: 6314019 (2001-11-01), Kuekes et al.
patent: 6423583 (2002-07-01), Avouris et al.
patent: 6445006 (2002-09-01), Brandes et al.
patent: 6515339 (2003-02-01), Shin et al.
patent: 6548841 (2003-04-01), Frazier et al.
patent: 6707098 (2004-03-01), Hofmann et al.
patent: 6759693 (2004-07-01), Vogeli et al.
patent: 6803840 (2004-10-01), Hunt et al.
patent: 6809465 (2004-10-01), Jin
patent: 6918284 (2005-07-01), Snow et al.
patent: 6919592 (2005-07-01), Segal et al.
patent: 6919740 (2005-07-01), Snider
patent: 6955937 (2005-10-01), Burke et al.
patent: 6969651 (2005-11-01), Lu et al.
patent: 6982903 (2006-01-01), Bertin et al.
patent: 6990009 (2006-01-01), Bertin et al.
patent: 7015500 (2006-03-01), Choi et al.
patent: 7115901 (2006-10-01), Bertin et al.
patent: 7115960 (2006-10-01), Bertin
patent: 7161403 (2007-01-01), Bertin
patent: 7274064 (2007-09-01), Bertin et al.
patent: 2001/0023986 (2001-09-01), Mancevski
patent: 2002/0175390 (2002-11-01), Goldstein et al.
patent: 2003/0200521 (2003-10-01), DeHon et al.
patent: 2004/0031975 (2004-02-01), Kern et al.
patent: 2005/0056877 (2005-03-01), Rueckes et al.
patent: 2006/0183278 (2006-08-01), Bertin et al.
patent: 2006/0237537 (2006-10-01), Empedocles
patent: 2 364 933 (2002-02-01), None
patent: WO-00/48195 (2000-08-01), None
patent: WO-01/03208 (2001-01-01), None
Avouris, Phaedon, “Carbon Nanotube Electronics,” Chemical Physics 2002, 281:421-445.
Bachtold, A., et al, “Logic Circuits Based on Carbon Nanotubes,” Physica (2003) pp. 42-46.
Chen, J., et al, “Self-aligned Carbon Nanotube Transistors with Charge Transfer Doping,” Applied Physics Letters (2005) 86:123108-1-3.
Chen, J., et al, “Self-aligned Carbon Nanotube Transistors with Novel Chemicsl Doping,” IEDM (2004) 04:695-698.
Derycke, V., “Controlling Doping and Carrier Injection in Carbon NanotubeTransistors”, Applied Physics Letters, 2002. 80 (15) 2773-2775. cited by other.
Derycke, V., et al., “Carbon Nanotube Inter- and Intramolecular Logic Gates”, Nano Letters, 2001. 1 (9) 453-456. cited by other.
Duan, X., et al, “Nonvolatile Memory and Programmable Logic from Molecule-Gated Nanowires,” Nano Letters, (2002) vol. 0, No. 0, A-D, 3.4A-D.
Heinze, S., “Carbon Nanotubes as Schottky Barrier Transistors” Physical Review Letters, 2002. 89 (10) 106801-1-106801-4. cited by other.
Huang, Y., et al, “Logic Gates and Computation from Assembled Nanowire Building Blocks,” Science (2001) 294(9):1313-1317.
Javey, A., et al, “Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics,” Nano Letters (2004) 4(3): 447-450.
Javey, A., et al, “Carbon Nanotube Transistor Arrays for Multistage Complementary Logic and Ring Oscillators,” Nano Letters, (2002) vol. 0, No. 0-A-D.
Javey, A., et al, “High-κ Dielectrics for Advanced Carbon-Nanotube Transistors and Logic Gates,” Nature Materials (2002) 1:241-246.
Martel, R., et al, “Carbon Nanotube Field-Effect Transistors and Logic Circuits,”DAC 2002, Jun. 10-12, 2002, vol. 7.4, pp. 94-98.
Radosavljevic, M. et al., “Nonvolatile Molecular Memory Elements Based on Ambipolar Nanotube Field Effect Transistors”, Nano Letters, 2002. 2 (7) 761-764. cited by other.
Rueckes, T. et al., “Carbon Nanotube—Based Nonvolatile Random Access Memory for Molecular Computing”, Science, 2000. 289, 94-97. cited by other- r.
Wind, S., et al, “Vertical Scaling of Carbon Nanotube Field-Effect Transistors Using Top Gate Electrodes,” Applied Physics Letters (2002), 80(20):3817-3819.
Wind, S., et al, “Fabrication and Electrical Characterization of Top Gate Single-Wall Carbon Nanotube Field-Effect Transistors,” IBM T.J. Watson Research Center, 6A1:1-9 plus figures 1-5, 2002.
Bertin Claude L.
Brock Darren K.
Jaiprakash Venkatachalam C.
Rueckes Thomas
Segal Brent M.
Nantero Inc.
Nguyen Cuong Q
Wilmer Cutler Pickering Hale and Dorr LLP
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