Non-volatile, electrically-programmable memory

Details Non-volatile, electrically-programmable memory Non-volatile, electrically-programmable memory

2007-08-24

2011-11-22

Bragdon, Reginald (Department: 2189)

Electrical computers and digital processing systems: memory

Storage accessing and control

Specific memory composition

C711S154000, C711SE12008, C365S185030, C365S185050, C365S195000

Reexamination Certificate

active

08065467

ABSTRACT:
A solid state mass storage device having a first storage area portion and a second storage area portion. The mass storage device including accessing means adapted to cause data to be stored in the first storage area portion in one of: only in memory cells belonging to columns of a first collection or only to columns of a second collection such that memory cells of the first storage area portion belonging to the first or second collection are left unprogrammed; or only in memory cells of even rows or only memory cells of odd row such that the memory cells of the first storage area belonging to the even or to the odd rows are left unprogrammed; or only in memory cells such that memory cells that are immediately adjacent to said memory cells in said row and column are left unprogrammed.

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