Non-volatile electrically alterable semiconductor memory...

Details Non-volatile electrically alterable semiconductor memory... Non-volatile electrically alterable semiconductor memory...

2007-10-02

2007-10-02

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S267000, C257SE21179

Reexamination Certificate

active

10798138

ABSTRACT:
In a memory cell array, each memory cell includes a control gate disposed laterally adjacent a floating gate. The memory cells in each memory column are disposed inside a single well. The control gate and the floating gate are disposed between two diffusion regions. Each memory cell may be erased and programmed by applying a combination of voltages to the diffusion regions, the control gate, and the well.

REFERENCES:
patent: 4959812 (1990-09-01), Momodomi et al.
patent: 4980861 (1990-12-01), Herdt et al.
patent: 5414693 (1995-05-01), Ma et al.
patent: 5427968 (1995-06-01), Hong
patent: 5949711 (1999-09-01), Kazerounian
patent: 6191975 (2001-02-01), Shimizu et al.
patent: 6462375 (2002-10-01), Wu
patent: 6765260 (2004-07-01), Hung et al.
patent: 6803276 (2004-10-01), Kim et al.

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