Non-volatile electrically alterable memory cell and use...

Details Non-volatile electrically alterable memory cell and use... Non-volatile electrically alterable memory cell and use...

2004-08-03

2008-11-11

Weiss, Howard (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S318000, C257S319000, C257S550000, C438S293000

Reexamination Certificate

active

07449744

ABSTRACT:
A multi-function memory array that includes a DRAM distributed in several DRAM sectors, a Flash EEPROM distributed in several Flash EEPROM sectors, a data bus interconnecting the DRAM sectors and the Flash EEPROM sectors, and a plurality of memory access control circuitries. Each DRAM sector and Flash EEPROM sector can be accessed independently and data can be transferred between a DRAM sector and a Flash EEPROM sector. External data can also be written into either DRAM or Flash EEPROM. Flash EEPROM in one sector is distributed in rows and columns, and cells in each column are separated from the cells in an adjacent column by deep trench isolation regions.

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A Dual Gate Flash EEPROM Cell With Two-Bits Storage Capacity; M. Lorenzini, et al.; 1997 IEE; Transactions on Components, Packaging and Mfg. and Mfg. Technology-PartA, vol. 20, No. 2 Jun. 1997.

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