Non-volatile electrical phase change memory device...

Details Non-volatile electrical phase change memory device... Non-volatile electrical phase change memory device...

2007-05-24

2010-12-14

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE29330, C438S095000

Reexamination Certificate

active

07851778

ABSTRACT:
The present invention relates to a non-volatile electrical phase change memory device comprising a substrate, a first interlayer dielectric film deposited on the substrate, a bottom electrode layer formed on the first dielectric layer, a second interlayer dielectric film formed on the bottom electrode layer, a phase change material layer deposited on the second interlayer dielectric film, and a top electrode layer formed on said phase change material layer, the bottom electrode layer being brought into contact with the phase change material layer through a contact hole which is formed in the second interlayer dielectric film and filled with the phase change material or bottom electrode material, so that the phase change layer and the bottom electrode layer come into close contact with each other,wherein an interfacial control layer is formed at the interface of the contact hole between the phase change layer and the bottom electrode layer, said interfacial control layer having strong chemical bonds with the phase change material as well as electrical resistivity and thermal conductivity values lower than those of the bottom electrode material.

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patent: 2006/0113537 (2006-06-01), Krulevitch et al.
Quirk, “Semiconductor Manufacturing Technology”, 2001, Prentice-Hall, pp. 336-337, 436-437, 231-232, 236.
Fair, “History of some early development . . . ”, 1998, Proceedings of IEEE, vol. 68, No. 1, pp. 111-137.

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