Non-volatile dynamic random access memory device

Details Non-volatile dynamic random access memory device Non-volatile dynamic random access memory device

1994-06-22

1995-03-07

Fears, Terrell W.

Static information storage and retrieval

Read/write circuit

36523001, 365222, 365149, G11C 1300

Patent

active

053964616

ABSTRACT:
A non-volatile dynamic random access memory device which includes a memory section including at least non-volatile memory cells for a non-volatile mode operation which includes a recall operation and a store operation; and a rewriting device for rewriting data when the power is turned on. The data is identical with data stored in the memory section.

REFERENCES:
patent: 5181188 (1993-01-01), Yamauchi et al.
Nikkei Microdevices; Technology/Update, "High-dielectric-constant/ferroelectric memory materials with sufficient electric characteristics and reliability data; searching for optimum materials and methods for producing films that are suitable for practical devices" (Jun. 1991, pp. 78-86.
Matsukuma, S., "Ferroelectric random access memory device; as they currently are and how they will be"Gekkan Semiconductor World (May 1990), pp. 118-125.
U.S. Patent Application Ser. No. 07/694,289 (filed Apr. 30, 1991).

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