Static information storage and retrieval – Systems using particular element – Capacitors
Reexamination Certificate
2006-08-29
2006-08-29
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Capacitors
C365S185010, C365S184000
Reexamination Certificate
active
07099181
ABSTRACT:
A method for operating a non-volatile dynamic random access memory (NVDRAM) device having a plurality of memory cells, each cell having a capacitor and a transistor having a floating gate includes the steps of (A) preparing a power-on mode for performing a DRAM operation; and (B) preparing a power-off mode for holding stored data in the memory cell.
REFERENCES:
patent: 4446536 (1984-05-01), Rodgers
patent: 5455786 (1995-10-01), Takeuchi et al.
patent: 5703804 (1997-12-01), Takata et al.
patent: 5712817 (1998-01-01), Suh
patent: 6009011 (1999-12-01), Yamauchi
patent: 6141248 (2000-10-01), Forbes et al.
patent: 6314017 (2001-11-01), Emori et al.
patent: 6674667 (2004-01-01), Forbes
patent: 6714474 (2004-03-01), Nanba
patent: 6829166 (2004-12-01), Lin et al.
Ahn Jin-Hong
Bae Gi-Hyun
Hong Sang-Hoon
Kim Yil-Wook
Lee Sang-Don
Blakely & Sokoloff, Taylor & Zafman
Hynix / Semiconductor Inc.
Nguyen Dang
Nguyen Tuan T.
LandOfFree
Non-volatile dynamic random access memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-volatile dynamic random access memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-volatile dynamic random access memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3678839