Static information storage and retrieval – Systems using particular element – Capacitors
Patent
1981-12-31
1984-02-14
Popek, Joseph A.
Static information storage and retrieval
Systems using particular element
Capacitors
365185, 365182, G11C 1124, G11C 1134
Patent
active
044320728
ABSTRACT:
This invention provides improved non-volatile semiconductor memories which include a one device dynamic volatile memory circuit having a switching device, a storage capacitor and a non-volatile floating gate device disposed between the storage node and the switching device. The non-volatile floating gate device has a floating gate, a floating gate FET, a control gate and a voltage divider having first and second serially-connected capacitors, with the floating gate being disposed at the common point between the first and second capacitors. One of the capacitors includes a dual charge or electron injector structure and the capacitance of this capacitor has a value substantially less than that of the other capacitor.
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D. J. DiMaria et al., "High Current Injection into SiO.sub.2 from Si Rich SiO.sub.2 Films and Experimental Applications", Journal of Applied Physics 51(5), May 1980, pp. 2722-2735.
Chao Hu H.
DiMaria Donelli J.
International Business Machines - Corporation
Kling Carl C.
McGee Hansel L.
Popek Joseph A.
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