Non-volatile dynamic RAM cell

Details Non-volatile dynamic RAM cell Non-volatile dynamic RAM cell

1980-12-22

1982-12-07

Martin, John C.

Static information storage and retrieval

Systems using particular element

Capacitors

365228, 365222, 365182, 365185, G11C 1124, G11C 1134

Patent

active

043631100

ABSTRACT:
This invention provides improved non-volatile semiconductor memories which include a one device dynamic volatile memory circuit having a storage capacitor with a plate and a storage node coupled to a non-volatile device having a floating gate, a control gate and a voltage divider having first and second serially-connected capacitors, with the floating gate being disposed at the common point between the first and second capacitors. The plate of the storage capacitor is connected to a reference voltage source. The control gate is preferably capacitively coupled to the floating gate through the first capacitor which includesa dual charge or electron injector structure. The capacitance of the first capacitor has a value substantially less than that of the second capacitor.

REFERENCES:
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patent: 3676717 (1972-07-01), Lockwood
patent: 3811076 (1974-05-01), Smith, Jr.
patent: 3900747 (1975-08-01), Yamazaki et al.
patent: 3916390 (1975-10-01), Chang et al.
patent: 4055837 (1977-10-01), Stein et al.
patent: 4064492 (1977-12-01), Schuermeyer et al.
patent: 4175291 (1979-11-01), Spence
patent: 4207615 (1980-06-01), Mar
D. J. DiMaria et al, "High Current Injection Into SiO.sub.2 from Si . . . ", J. Appl. Phys., 51(5), May 1980, pp. 2722-2734.
D. J. DiMaria et al, "Electrically-Alterable Memory Using A . . . ", IEEE Electron Device Letters, vol. EDL-1, No. 9, Sep. 1980, pp. 179-181.

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