Non-volatile content addressable memory using...

Details Non-volatile content addressable memory using... Non-volatile content addressable memory using...

2008-01-15

2008-01-15

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S104000, C365S149000

Reexamination Certificate

active

11172473

ABSTRACT:
A non-volatile content addressable memory cell comprises: a first phase change material element, the first phase change material element having one end connected to a match-line; a first transistor, the first transistor having a gate connected to a word-line, a source connected to a true bit-read-write-search-line, and a drain connected to another end of the first phase change material element; a second phase change material element, the second phase change material element having one end connected to the match-line; and a second transistor, the second transistor having a gate connected to the word-line, a source connected to a complementary bit-read-write-search-line, and a drain connected to another end of the second phase change material element.

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G. Wicker et al., “Nonvolatile, High Density, High Performance Phase Change Memory,” Ovonyx, Inc., Mission Research Corporation, pp. 1-8, Sep. 1999.

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