Non-volatile and memory semiconductor integrated circuit

Details Non-volatile and memory semiconductor integrated circuit Non-volatile and memory semiconductor integrated circuit

2007-12-18

2007-12-18

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE29300, C438S257000

Reexamination Certificate

active

11087592

ABSTRACT:
A semiconductor integrated circuit device includes first, second gate electrodes, first, second diffusion layers, contact electrodes electrically connected to the first diffusion layers, a first insulating film which has concave portions between the first and second gate electrodes and does not contain nitrogen as a main component, a second insulating film which is formed on the first insulating film and does not contain nitrogen as a main component, and a third insulating film formed on the first diffusion layers, first gate electrodes, second diffusion layers and second gate electrodes with the second insulating film disposed therebetween in a partial region. The second insulating film is formed to fill the concave portions and a portion between the first and second gate electrodes has a multi-layered structure containing at least the first and second insulating films.

REFERENCES:
patent: 6703669 (2004-03-01), Goda et al.
patent: 6720612 (2004-04-01), Takeuchi et al.
patent: 7045413 (2006-05-01), Lee et al.
patent: 7166889 (2007-01-01), Tsunoda et al.
patent: 2005/0218442 (2005-10-01), Hieda
patent: 2005/0237847 (2005-10-01), Goda et al.
patent: 2005/0258543 (2005-11-01), Yaegashi
patent: 2006/0157801 (2006-07-01), Goda et al.
patent: 2006/0186464 (2006-08-01), Sakuma et al.
patent: 2006/0250849 (2006-11-01), Ichige et al.
patent: 2007/0004143 (2007-01-01), Saito et al.
patent: 2007/0012981 (2007-01-01), Yaegashi
patent: 2007/0012991 (2007-01-01), Yaegashi
patent: 3-242934 (1991-10-01), None
patent: 2001-148428 (2001-05-01), None
patent: 2002-141420 (2002-05-01), None
patent: 2002-280463 (2002-09-01), None
patent: 2003-197779 (2003-07-01), None

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