Non-uniform ion implantation

Details Non-uniform ion implantation Non-uniform ion implantation

2006-05-26

2009-06-09

Berman, Jack I (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492200, C250S3960ML, C250S3960ML, C250S252100, C250S442110, C250S398000, C427S523000, C438S527000, C315S111810, C118S729000, C118S722000

Reexamination Certificate

active

07544957

ABSTRACT:
A method includes receiving an input signal representative of a desired two-dimensional non-uniform dose pattern for a front surface of a workpiece, driving the workpiece relative to an ion beam to distribute the ion beam across the front surface of the workpiece, and controlling at least one parameter of an ion implanter when the ion beam is incident on the front surface of the workpiece to directly create the desired two-dimensional non-uniform dose pattern in one pass of the front surface of workpiece relative to the ion beam. The beam may be a scanned beam or a ribbon beam. An ion implanter is also provided.

REFERENCES:
patent: 4922106 (1990-05-01), Berrian et al.
patent: 6750462 (2004-06-01), Iwasawa et al.
patent: 2004/0232350 (2004-11-01), Iwasawa et al.
patent: 2005/0184254 (2005-08-01), Matsumoto et al.
patent: 2006/0057303 (2006-03-01), Agarwal et al.
patent: 2006/0240651 (2006-10-01), Renau et al.
patent: 1580789 (2005-09-01), None
patent: 9908306 (1999-02-01), None

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