Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – By application of corpuscular or electromagnetic radiation
Patent
1996-06-26
1999-12-14
Mulpuri, Savitri
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
By application of corpuscular or electromagnetic radiation
438512, 438514, H01L 21265
Patent
active
060017155
ABSTRACT:
Bulk crystalline materials are annealed by introducing into them mechanical energy of sufficient intensity to create a large amplitude sound wave. The mechanical energy may be introduced into the material, for example, by laser ablation. Where the bulk crystalline material is a doped semiconductor, the process also electrically activates the material.
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Covington Billy Charles
Donnelly David William
Grun Jacob
Manka Charles Keith
Edelberg Barry A.
McDonnell Thomas E.
Mulpuri Savitri
The United States of America as represented by the Secretary of
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