Non-thermal annealing with electromagnetic radiation in the...

Details Non-thermal annealing with electromagnetic radiation in the... Non-thermal annealing with electromagnetic radiation in the...

2007-02-13

2007-02-13

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S535000, C438S550000, C438S714000

Reexamination Certificate

active

11112643

ABSTRACT:
A method of non-thermal annealing of a silicon wafer comprising irradiating a doped silicon wafer with electromagnetic radiation in a wavelength or frequency range coinciding with lattice phonon frequencies of the doped semiconductor material. The wafer is annealed in an apparatus including a cavity and a radiation source of a wavelength ranging from 10–25 μm and more particularly 15–18 μm, or a frequency ranging from 12–30 THz and more particularly 16.5–20 THz.

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