Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2007-09-04
2007-09-04
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257SE23194, C257S758000, C257S775000, C257S483000, C257S484000, C438S458000, C438S460000, C438S462000
Reexamination Certificate
active
10780512
ABSTRACT:
A method of forming an improved seal ring structure is described. A continuous metal seal ring is formed along a perimeter of a die wherein the metal seal ring is parallel to the edges of the die and sloped at the corner of the die so as not to have a sharp corner and wherein the metal seal ring has a first width at the corners and a second width along the edges wherein the first width is wider than the second width.
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Co-pending U.S. Appl. No. 09/989,837, filed on Nov. 20, 2001, assigned to the same assignee, “RF Seal Ring Structure”.
Chi Kuan-Shou
Huang Tai-Chun
Yao Chih-Hsiang
Chu Chris C.
Haynes and Boone LLP
Jackson Jerome
Taiwan Semiconductor Manufacturing Company , Ltd.
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