Non-polar and semi-polar GaN substrates, devices, and...

Details Non-polar and semi-polar GaN substrates, devices, and... Non-polar and semi-polar GaN substrates, devices, and...

2008-09-12

2010-06-01

Nhu, David (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S099000, C438S197000, C257SE21170, C257SE21051, C257SE21108, C257SE21304, C257SE21327, C257SE21563, C257SE21701

Reexamination Certificate

active

07727874

ABSTRACT:
Non-polar or semi-polar (Al, Ga, In)N substrates are fabricated by re-growth of (Al, Ga, In)N crystal on (Al, Ga, In)N seed crystals, wherein the size of the seed crystal expands or is increased in the lateral and vertical directions, resulting in larger sizes of non-polar and semi-polar substrates useful for optoelectronic and microelectronic devices. One or more non-polar or semi-polar substrates may be sliced from the re-grown crystal. The lateral growth rate may be greater than the vertical growth rate. The seed crystal may be a non-polar seed crystal. The seed crystal may have crystalline edges of equivalent crystallographic orientation.

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