Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-08-15
2006-08-15
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S011000
Reexamination Certificate
active
07091514
ABSTRACT:
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These non-polar (11{overscore (2)}0) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.
REFERENCES:
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6177292 (2001-01-01), Hong et al.
patent: 6180270 (2001-01-01), Cole et al.
patent: 6350666 (2002-02-01), Kryliouk
patent: 6413627 (2002-07-01), Motoki et al.
patent: 6441391 (2002-08-01), Ohno et al.
patent: 6582986 (2003-06-01), Kong et al.
patent: 6586316 (2003-07-01), Tsuda et al.
patent: 6602763 (2003-08-01), Davis et al.
patent: 6635901 (2003-10-01), Sawaki et al.
patent: 6645295 (2003-11-01), Koike et al.
patent: 2001/0029086 (2001-10-01), Ogawa et al.
patent: 2002/0098641 (2002-07-01), Tsuda et al.
patent: 2004/0108513 (2004-06-01), Narukawa et al.
patent: 0 942 459 (1998-04-01), None
patent: 2001 257166 (2001-09-01), None
patent: 2002 076329 (2002-03-01), None
patent: 2002 076521 (2002-03-01), None
Iwata, K., et al., “Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R-, and M-Plane Sapphire and Silica Glass Substrates” Ipn. J. Appl. Phys. vol. 36 (1997), pp. L 661-L664.
Kapolnck, D., et al., “Anisotropic epitaxial lateral growth in GaN selective area epitaxy” Appl. Phys. Lett. 71 (9), Sep. 1, 1997, pp. 1204-1206.
Langer, R., et al., “Giant electric fields in unstrained GaN single quantum wells” Appl. Phys. Lett., 74 (25), Jun. 21, 1999, pp. 3827-3829.
Lefebvre, P. et al., “High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy” Appl. Phys. Lett. 78 (9), Feb. 26, 2001, pp. 1252-1254.
Lefebvre, P., et al., “Time-resolved photoluminescence as a probe of internal electric fields in GaN—(GaAl)N quantum wells” Phys. Rev. B. 59 (23), Jun. 15, 1999-I, pp. 15363-15367.
Lei, T., “Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates” J. Appl. Phys. 74 (7), Oct. 1, 1993, pp. 4430-4437.
Leroux, M., “Barrier-width dependence of group-III nitrides quantum-well transition energies” Phys. Rev. B. 60 (3), Jul. 15, 1991-I, pp. 1496-1499.
Leszcynski, M., et al., “Lattice parameters of gallium nitride” Appl. Phys. Lett. 69 (1), Jul. 1, 1996, pp. 73-75.
Liu, L. et al., “Substrates for gallium nitride epitaxy”, Materials Science and Engineering R, Reports: A Review Journal, vol. 37, No. 3, Apr. 30, 2002, pp. 61-127.
Marchand, H., et al., “Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition” Appl. Phys. Lett. 73 (6), Aug. 10, 1998, pp. 747-749.
Marchand, H., et al., “Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD” MRS Internet J. Nitride Semicond. Res. 3, 3 (1998), pp. 1-7.
Marchand, H., et al., “Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition” J. of Crystal Growth, vol. 195, No. 1-4, Dec. 15, 1998, pp. 328-332.
Metzger, Th., et al., “X-Ray Diffraction Study of Gallium Nitride Grown by MOCVD” Physica status solidi (b) 193, 1996, pp. 391-7.
B. Monemar, et al., “Properties of Zn-doped VPE-grown GaN.I.Luminescence data in relation to doping conditions” J. Appl. Phys. 51 (1), Jan. 1980, pp. 625-639.
Moustakas, T.D., et al., “Growth of GaN by ECR-assisted MBE” Physica B 185, 1993, pp. 36-49.
Motoki, J., et al., “Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate” Jpn. J. Appl. Phys. vol. 40 (2), (2001), pp. L140-L143.
Nakamura, S, et al., “Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50° C. with a Fundamental Transverse Mode” Jpn. J. Appl. Phys. 38 (2), 1999, pp. L226-L229.
Nam, O., et al., “Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy” Appl. Phys. Lett. 71 (18), Nov. 3, 1997, pp. 2638-2640.
Nataf, G., et al., “Lateral overgrowth of high quality GaN layers on GaN/Al2O3patterned substrates by halide vapour-phase epitaxy” J. of Crystal Growth (192), Feb. 20, 1998, pp. 73-78.
Ng, H. M., “Molecular-beam epitaxy of GaN/AlxGa1−xN multiple quantum wells on R-plane (1012) sapphire substrates” Appl. Phys. Lett. 80 (23), Jun. 10, 2002, pp. 4369-4371.
Nishida, T., et al., “Ten Milliwatt Operation of an AlGaN-Based Light Emitting Diode Grown on GaN Substrate” Phys. Stat. Sol. (a) 188 (1), 2001, pp. 113-116.
Park, S., et al., “Spontaneous polarization effects in wurtzite GaN/AlGaN quantum wells and comparison with experiment” Appl. Phys. Lett. 76 (15) Apr. 10, 2000, pp. 1981-1983.
Park, J., et al., “Selective-area and lateral epitaxial overgrowth of III-N materials by metal organic chemical vapor deposition” Appl. Phys. Lett. 73 (3), Jul. 20, 1998, pp. 333-335.
Parilliaud, O., et al., “Localized Epitaxy of GaN by HVPE on patterned Substrates” MRS Internet J. Nitride Semicond. Res. 3 (40), Oct. 19, 1998, pp. 1-9.
Paskova, T., et al., “Defect Reduction in HVPE Growth of GaN and Related Optical Spectra” Phys. Stat. Sol. (a) 183, (2001), pp. 197-203.
Rosner, S.J., et. al., “Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride” Appl. Phys. Lett. 74 (14), Apr. 5, 1999, pp. 2035-2037.
Sakai, A., et al., “Self-organized propagation of dislocations in GaN films during epitaxial lateral growth” Appl. Phys. Lett. 76 (4), Jan. 24, 2000, pp. 442-444.
Sano, M., et al., “Epitaxial Growth of Undoped and Mg-Doped GaN” Jpn. J. of Appl. Phys. 15 (10), Oct. 1976, pp. 1943-1950.
Shintani, A., et al. “Light Emitting Patterns of Gallium Nitride Electroluminescence” J. Electrochem. Soc. 123 (10), Oct. 1976, pp. 1575-1578.
Smorchkova, I.P., et. al., “Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy” J. Appl. Phys. 86 (8), Oct. 15, 1999, pp. 4520-4526.
Takeuchi, T., et. al., “Determination of piezoelectric fields in strained GaLnN quantum wells using the quantum-confined Stark effect” Appl. Phys. Lett. 73 (12), Sep. 21, 1998, pp. 1691-1693.
Takeuchi, T., et. al., “Quantum-Confined Stark Effect due to Piezoelectric Fields in GalnN Strained Quantum Wells” Jpn. J. Appl. Phys. vol. 36, Apr. 1, 1997, pp. L382-385.
Tan, I-H., et. al., “A self consistent solution of Schrodinger-Poisson equations using a nonuniform mesh” J. Appl. Phys. 68 (8), Oct. 15, 1990, pp. 4071-4076.
Tsuchiya, H., et al., “Growth condition dependence of GaN crystal structure on (0 0 1)GaAs by hydride vapor-phase epitaxy” J. of Crystal Growth (189/190), 1998, pp. 395-400.
Waltereit, P., et. al., “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes” Nature vol. 406, Aug. 24, 2000, pp. 865-868.
Wright, A.F., “Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN” J. Appl. Phys. 82 (6), Sep. 15, 1997, pp. 2833-2839.
Yablonovitch, E., et. al., “Reduction of Lashing Threshold Current Density by the Lowering of Valence Band Effective Mass” J. of Lightwave Tech. vol. LT-4 (5), May 1986, pp. 504-506.
Zheleva, T., et. al., “Dislocation density reduction via lateral epitaxy in selectivity grown GaN structures” Appl. Phys. Lett. 71 (17), Oct. 27, 1997, pp. 2472-2474.
Zheleva, T., et. al., “Pendo-epitaxy—A new approach for lateral growth of gallium ni
Craven Michael D.
Denbaars Steven P.
Keller Stacia
Margalith Tal
Mishra Umesh K.
Gates & Cooper LLP
Nelms David
Nguyen Thinh T
The Regents of the University of California
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