Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2011-07-19
2011-07-19
Nguyen, Thinh T (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S011000, C257S012000, C257S019000
Reexamination Certificate
active
07982208
ABSTRACT:
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (1120) a-plane GaN layers are grown on an r-plane (1102) sapphire substrate using MOCVD. These non-polar (1120) a-plane GaN layers comprise templates for producing non-polar (Al, B, In, Ga)N quantum well and heterostructure materials and devices.
REFERENCES:
patent: 5290393 (1994-03-01), Nakamura
patent: 5432808 (1995-07-01), Hatano et al.
patent: 5468678 (1995-11-01), Nakamura et al.
patent: 5725674 (1998-03-01), Moustakas et al.
patent: 5727008 (1998-03-01), Koga
patent: 5777350 (1998-07-01), Nakamura et al.
patent: 5784187 (1998-07-01), Cunningham et al.
patent: 5793054 (1998-08-01), Nido
patent: 5923950 (1999-07-01), Ishibashi et al.
patent: 6045626 (2000-04-01), Yano et al.
patent: 6051849 (2000-04-01), Davis et al.
patent: 6064078 (2000-05-01), Northrup et al.
patent: 6069021 (2000-05-01), Terashima et al.
patent: 6072197 (2000-06-01), Horino et al.
patent: 6086673 (2000-07-01), Molnar
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6177292 (2001-01-01), Hong et al.
patent: 6180270 (2001-01-01), Cole et al.
patent: 6201262 (2001-03-01), Edmond et al.
patent: 6218280 (2001-04-01), Kryliouk et al.
patent: 6259122 (2001-07-01), Ota et al.
patent: 6265089 (2001-07-01), Fatemi et al.
patent: 6268621 (2001-07-01), Emmi et al.
patent: 6271104 (2001-08-01), Razeghi et al.
patent: 6298079 (2001-10-01), Tanaka et al.
patent: 6316785 (2001-11-01), Nunoue et al.
patent: 6350666 (2002-02-01), Kryliouk
patent: 6413627 (2002-07-01), Moroki et al.
patent: 6440823 (2002-08-01), Vaudo et al.
patent: 6441391 (2002-08-01), Ohno et al.
patent: 6515313 (2003-02-01), Ibbetson et al.
patent: 6566218 (2003-05-01), Otani et al.
patent: 6582986 (2003-06-01), Kong et al.
patent: 6586316 (2003-07-01), Tsuda et al.
patent: 6590336 (2003-07-01), Kadota
patent: 6599362 (2003-07-01), Ashby et al.
patent: 6602763 (2003-08-01), Davis et al.
patent: 6623560 (2003-09-01), Biwa et al.
patent: 6627552 (2003-09-01), Nishio et al.
patent: 6635901 (2003-10-01), Sawaki et al.
patent: 6645295 (2003-11-01), Koike et al.
patent: 6773504 (2004-08-01), Motoki et al.
patent: 6847057 (2005-01-01), Gardner et al.
patent: 6870191 (2005-03-01), Niki et al.
patent: 6873634 (2005-03-01), Onomura et al.
patent: 6882051 (2005-04-01), Majumdar et al.
patent: 6951695 (2005-10-01), Xu et al.
patent: 6958093 (2005-10-01), Vaudo et al.
patent: 6969426 (2005-11-01), Bliss et al.
patent: 6977953 (2005-12-01), Hata et al.
patent: 6996147 (2006-02-01), Majumdar et al.
patent: 7057211 (2006-06-01), Dwilinski et al.
patent: 7132730 (2006-11-01), Dwilinski et al.
patent: 7186302 (2007-03-01), Chakraborty et al.
patent: 7208096 (2007-04-01), Akkipeddi et al.
patent: 2001/0011935 (2001-08-01), Lee et al.
patent: 2001/0029086 (2001-10-01), Ogawa et al.
patent: 2002/0015866 (2002-02-01), Hooper et al.
patent: 2002/0047113 (2002-04-01), Ohno et al.
patent: 2002/0074552 (2002-06-01), Weeks et al.
patent: 2002/0144645 (2002-10-01), Kim et al.
patent: 2002/0187356 (2002-12-01), Weeks et al.
patent: 2003/0024475 (2003-02-01), Anderson
patent: 2003/0114017 (2003-06-01), Wong et al.
patent: 2003/0198837 (2003-10-01), Craven et al.
patent: 2004/0094773 (2004-05-01), Kiyoku et al.
patent: 2004/0108513 (2004-06-01), Narukawa et al.
patent: 2004/0135222 (2004-07-01), Alfano et al.
patent: 2004/0251471 (2004-12-01), Dwilinski et al.
patent: 2004/0261692 (2004-12-01), Dwilinski et al.
patent: 2005/0142391 (2005-06-01), Dmitriev et al.
patent: 2005/0161697 (2005-07-01), Nakahata et al.
patent: 2005/0205884 (2005-09-01), Kim et al.
patent: 2005/0214992 (2005-09-01), Chakraborty et al.
patent: 2005/0245095 (2005-11-01), Haskell et al.
patent: 2005/0258451 (2005-11-01), Saxler et al.
patent: 2006/0138431 (2006-06-01), Dwilinski et al.
patent: 2009/0146160 (2009-06-01), Nakahara
patent: 0 942 459 (1998-04-01), None
patent: 1385196 (2004-01-01), None
patent: 03-003233 (1991-09-01), None
patent: 05-183189 (1993-07-01), None
patent: 09-116225 (1997-02-01), None
patent: 10-135576 (1998-05-01), None
patent: 10312971 (1998-11-01), None
patent: 11-191657 (1999-07-01), None
patent: 11-346002 (1999-12-01), None
patent: 2001 257166 (2001-09-01), None
patent: 2001-298215 (2001-10-01), None
patent: 2001342100 (2001-11-01), None
patent: 2002 076329 (2002-03-01), None
patent: 2002 076521 (2002-03-01), None
patent: 2002076521 (2002-03-01), None
patent: 2002-111134 (2002-04-01), None
patent: 2003-124573 (2003-04-01), None
patent: 03/089694 (2003-10-01), None
patent: 2004/061909 (2004-07-01), None
patent: 2004/061969 (2004-07-01), None
patent: 2005/064643 (2005-07-01), None
Amano, H. et. al., “Metalorganic vapor phase epitaxial growth of a high quality GaN film using an ATN buffer layer” Appl. Phys. Lett. 48 (5), Feb. 3, 1986, pp. 353-355.
Ambacher, O., et. al., “Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructurces” J. Appl. Phys., 85 (6), Mar. 15, 1999, pp. 3222-3233.
Bottcher, T., et al., “The role of high-temperature island coalescence in the development of stresses in GaN films” Appl. Phys. Lett. 78 (14), Apr. 2, 2001, pp. 1976-1978.
Brandt, O., et al., “Determination of strain state and composition of highly mismatched group-III nitride heterostructures by x-ray diffraction” J. Phys. D. Appl. Phys. 35 (2002), pp. 577-585.
Craven, M.D., et al., “Characterization of a-Plane GaN/(Al,Ga)N Multiple Quantum Wells Grown via Metalorganic Chemical Vapor Deposition” Jpn. J. Appl. Phys. vol. 42, (2003), pp. L235-L238.
Craven, M.D., et al., “Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN” Appl. Phys. Lett. 81 (7), Aug. 12, 2002, pp. 1201-1203.
Dovidenko, K. et. al, Characteristics of stacking faults in AlN thin films J. Appl Phys. 82 (9), Nov. 1, 1997, pp. 4296-4299.
Dupuis, R.D., et al, “Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition” J. Crystal Growh, vol. 195, No. 1-4, Dec. 15, 1998, pp. 340-345.
Eastman, L.F., “The Toughest Transistor Yet” IEEE Spectrum 39 (5), May 2002, pp. 28-33.
Eddy, C.R., Jr., “Growth of gallium nitride thins films by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy” J. Appl. Phys. 73 (1), Jan. 1, 1993, pp. 448-455.
Etzkom E.V., et al., “Cracking of GaN films” J. Appl. Phys. 89 (2), Jan. 15, 2001, pp. 1025-1034.
Freitas, J. A., Jr., et al., “Optical characterization of lateral epitaxial overgrown GaN layers” Appl. Phys. Lett. 72 (23), Jun. 8, 1998, pp. 2990-2992.
Grandjean, N., et al., “Built-in electric-field effects in wurtzite AlGaN quantum wells” J. Appl. Phys. 86 (7), Oct. 1, 1999, pp. 3714-3720.
Heying, B., et al., “Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films” Appl. Phys. Lett. 68 (5), Jan. 29, 1996, pp. 643-645.
Im, J.S., et. al., “Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells” Phys. Rev. B. 57 (16), Apr. 15, 1998-II, pp. R9435-R9438.
Iwara, K., et. al., “Gas Source Molecular Beam Epitaxy Growth of GaN on C-, A-, R-, and M-Plane Sapphire and Silica Glass Substrates” Jpn. J. Appl. Phys. vol. 36 (1997), pp. L 661-L664.
Kapolnek, D., et al., “Anisotropic epitaxial lateral growth in GaN selective area epitaxy” Appl. Phys. Lett. 71 (9), Sep. 1, 1997, pp. 1204-1206.
Langer, R., et. al., “Giant electric fields in unstrained GaN single quantum wells” Appl. Phys. Lett., 74 (25), Jun. 21, 1999, pp. 3827-3829.
Lefebvre, P. et al., “High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy” Appl. Phys. Lett. 78 (9), Feb. 26, 2001, pp. 1252-1254.
Lefebvre, P., et al.,
Craven Michael D.
DenBaars Steven P.
Keller Stacia
Margalith Tal
Mishra Umesh K.
Gates & Cooper LLP
Nguyen Thinh T
The Regents of the University of California
LandOfFree
Non-polar (Al,B,In,Ga)N quantum well and heterostructure... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Non-polar (Al,B,In,Ga)N quantum well and heterostructure..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-polar (Al,B,In,Ga)N quantum well and heterostructure... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2733736