Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-05-02
2006-05-02
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C438S095000, C438S103000, C438S128000, C438S237000, C438S257000, C438S308000
Reexamination Certificate
active
07038231
ABSTRACT:
A method for fabrication and a structure of a self-aligned (crosspoint) memory device comprises lines (wires) in a first direction and in a second direction. The wires in the first direction are formed using a hard mask material that is resistant to the pre-selected etch processes used for creation of the lines in both the first and the second direction. Consequently, the hard mask material for the lines in the first direction form part of the memory stack.
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Hart Mark W.
Marrian Christie R. K.
McClelland Gary M.
Rettner Charles T.
Wickramasinghe Hermantha K.
Gibb I.P. Law Firm LLC
Johnson Daniel E.
Tran Mai-Huong
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