Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-06-14
2011-06-14
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29193, C438S199000, C438S933000
Reexamination Certificate
active
07960794
ABSTRACT:
A non-planar tri-gate p-MOS transistor structure with a strained channel region and a non-planar tri-gate integrated strained complimentary metal-oxide-semiconductor (CMOS) structure are described. A relaxed Si1-xGexlayer is formed on the silicon-on-isolator (SOI) substrate. The relaxed Si1-xGexlayer is patterned and subsequently etched to form a fin on the oxide. The compressively stressed Si1-yGeylayer, having the Ge content y higher than the Ge content x in the relaxed Si1-xGexlayer, is epitaxially grown on the fin. The Si1-yGeylayer covers the top and two sidewalls of the fin. The compressive stress in the Si1-yGeylayer substantially increases the hole mobility in a channel of the non-planar tri-gate p-MOS transistor structure.
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Chau Robert
Datta Suman
Doyle Brian S
Jin Been-Yih
Zelick Nancy M
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Vu David
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