Non-outgassing low activation energy resist

Details Non-outgassing low activation energy resist Non-outgassing low activation energy resist

2007-06-05

2007-06-05

Schilling, Richard L. (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

C430S330000, C430S905000, C430S326000

Reexamination Certificate

active

11228589

ABSTRACT:
Numerous embodiments of a method to prevent outgassing from a low activation energy photoresist are described. In one embodiment of the present invention, a photoresist material is dispensed over a substrate to form a photoresist layer. The photoresist layer includes branched polymers coupled with acetal or ketal linkages. An exposed portion of the photoresist layer is exposed to a radiation treatment to cleave the acetal or ketal linkages and separate the branched polymers. The photoresist layer is baked at a temperature below about 100° C., and the separated branched polymers are too large to outgass from the photoresist layer.

REFERENCES:
patent: 4897336 (1990-01-01), Chien
patent: 6872505 (2005-03-01), Cao et al.
Wallraff, G.M., et al. “Studies of Acid Diffusion in Low Ea Chemically Amplified Photoresists” pp. 309-318, from Advances in Resist Technology and Processing XXII, edited by John L. Sturtevart, Proceedings of SPIE vol. 5753 (SPIE, Bellingham, WA 2005) 0277-786X/05.

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