Non-lithographic shrink techniques for improving line edge...

Optics: measuring and testing – Dimension – Width or diameter

Reexamination Certificate

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C356S601000

Reexamination Certificate

active

07064846

ABSTRACT:
The present invention relates generally to photolithographic systems and methods, and more particularly to systems and methodologies that facilitate the reduction of line-edge roughness (LER) and/or standing wave expression during pattern line formation in an integrated circuit. Systems and methods are disclosed for retaining a target critical dimension (CD) of photoresist lines, comprising a non-lithographic shrink component that facilitates mitigating LER and/or standing wave expression, wherein the shrink component is employed to heat a particular resist to the glass transition temperature of the resist to effectuate mitigation of LER and/or standing wave expression. Additionally, by heating the resist to its glass transition temperature, the systems and methods of the present invention effectively impede deviation from a desired target critical dimension.

REFERENCES:
patent: 6506665 (2003-01-01), Sato
patent: 6516528 (2003-02-01), Choo et al.
patent: 6570157 (2003-05-01), Singh et al.
patent: 6582891 (2003-06-01), Hallock et al.
patent: 6709807 (2004-03-01), Hallock et al.
patent: 6905949 (2005-06-01), Arita
patent: 2004/0038549 (2004-02-01), Arita

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