Non-linear circuit elements on integrated circuits

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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438627, 438643, 438639, H01L 214763

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active

060665602

ABSTRACT:
An electrical interconnection structure on an integrated circuit is provided that has a) a substrate layer; b) a diffusion barrier on the substrate layer; c) a copper layer on the diffusion barrier; and d) a copper oxide layer on the copper layer. Methods of making such an interconnection structure is also provided. Such an interconnection structure may be used as a rectifier to prevent damage of sensitive devices from voltage spikes.

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Ramo, Joshua C., "Chips Ahoy", Time, Oct. 6, 1997, p. 72.

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