Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-05-05
2000-05-23
Bowers, Charles
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438627, 438643, 438639, H01L 214763
Patent
active
060665602
ABSTRACT:
An electrical interconnection structure on an integrated circuit is provided that has a) a substrate layer; b) a diffusion barrier on the substrate layer; c) a copper layer on the diffusion barrier; and d) a copper oxide layer on the copper layer. Methods of making such an interconnection structure is also provided. Such an interconnection structure may be used as a rectifier to prevent damage of sensitive devices from voltage spikes.
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Bowers Charles
Lee Hsien Ming
LSI Logic Corporation
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