Non-HBr shallow trench isolation etch process

Details Non-HBr shallow trench isolation etch process Non-HBr shallow trench isolation etch process

1998-04-30

2000-05-30

Utech, Benjamin L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

713719, 713724, H01L 213065

Patent

active

060690860

ABSTRACT:
An etchant composition for etching straight walled, tapered trenches in silicon comprising chlorine, nitrogen and a mixture of helium and oxygen. The resultant trenches can be readily filled with a dielectric material without the formation of voids. The etchant of the invention is less corrosive, and thus provides increased chamber life and reduced costs over hydrogen bromide-containing etchants.

REFERENCES:
patent: 4468285 (1984-08-01), Bayman et al.
patent: 5522966 (1996-06-01), Komura et al.
patent: 5652170 (1997-07-01), Keller et al.
patent: 5871659 (1999-02-01), Sakano et al.
patent: 5900163 (1999-05-01), Yi et al.
EP Search Report PCT/US 99/07919 Jul. 16, 1999.

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