Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2005-01-25
2005-01-25
Nguyen, Thanh (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S018000, C257S019000, C257S192000
Reexamination Certificate
active
06847098
ABSTRACT:
A method of forming a buried silicon oxide region in a semiconductor substrate with portions of the buried silicon oxide region formed underlying portions of a strained silicon shape, and where the strained silicon shape is used to accommodate a semiconductor device, has been developed. A first embodiment of this invention features a buried oxide region formed in a silicon alloy layer, via thermal oxidation procedures. A first portion of the strained silicon layer, protected during the thermal oxidation procedure, overlays the silicon alloy layer while a second portion of the strained silicon layer overlays the buried oxide region. A second embodiment of this invention features an isotropic dry etch procedure used to form an isotropic opening in the silicon alloy layer, with the opening laterally extending under a portion of the strained silicon layer. Subsequent silicon oxide deposition and planarization procedures results in a first portion of the strained silicon layer overlying the silicon alloy layer while a second portion overlays a buried oxide region. A semiconductor device is then formed in the strained silicon layer, with specific elements of the semiconductor device located on a buried oxide region.
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Guo Jyh-Chyurn
Hu Chenming
Lin Da-Chi
Tseng Horng-Huei
Haynes and Boone LLP
Nguyen Thanh
Taiwan Semiconductor Manufacturing Company , Ltd.
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