Non-etch back SOG process for hot aluminum metallizations

Details Non-etch back SOG process for hot aluminum metallizations Non-etch back SOG process for hot aluminum metallizations

1995-11-02

1997-04-01

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

216 41, 438624, 438627, 438633, 438636, 438637, H01L 2144, H01L 2148

Patent

active

056165196

ABSTRACT:
A process has been developed in which planar, multilevel metallizations, are used to fabricate semiconductor devices. The process features initially forming tall, narrow photoresist plugs, and filling the spaces between photoresist plugs with a planarizing layer of a composite dielectric, which includes a spin on glass layer. Removal of the photoresist plug results in the creation of a narrow via hole. The composite dielectric was deposited by initially using a non-porous, silicon oxide layer, followed by the planarizing spin on glass layer. Therefore metal via fills will interface the non-porous, silicon oxide layer.

REFERENCES:
patent: 4353159 (1982-10-01), Hsu
patent: 4917759 (1990-04-01), Fisher et al.
patent: 5158910 (1992-10-01), Cooper et al.
patent: 5283208 (1994-02-01), Lorsung et al.
patent: 5312512 (1994-05-01), Allman et al.
patent: 5354713 (1994-10-01), Kim et al.
patent: 5518963 (1996-05-01), Park

Affiliated with

Also associated with

Rating

Non-etch back SOG process for hot aluminum metallizations does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Non-etch back SOG process for hot aluminum metallizations, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Non-etch back SOG process for hot aluminum metallizations will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-538619