Non-destructive read ferroelectric memory cell utilizing the ram

Details Non-destructive read ferroelectric memory cell utilizing the ram Non-destructive read ferroelectric memory cell utilizing the ram

1994-08-26

1998-03-17

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 257295, G11C 1122

Patent

active

057294887

ABSTRACT:
A memory cell is constructed using a ferroelectric capacitor having an insulator formed of a ferroelectric material that has a zero field capacitance which is controllably dependent upon the electrical charging path by which the zero field capacitance is reached. Preferably, the material is characterized by a first zero field capacitance following saturation of the polarization by a first applied voltage applied in a first polarization direction, and a second zero field capacitance following saturation of the polarization by the first applied voltage applied in the first polarization direction followed by partial depolarization by a second voltage applied in a direction opposite to the first polarization direction. A second ferroelectric capacitor or a linear capacitor may be placed in parallel with the ferroelectric capacitor to form a two-capacitor memory cell. Data may be read to or from the capacitor cell without impairing the state of the stored data.

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patent: 5151877 (1992-09-01), Brennan
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patent: 5297077 (1994-03-01), Imai et al.
patent: 5375085 (1994-12-01), Gnade et al.
patent: 5383150 (1995-01-01), Nakamura et al.
patent: 5406510 (1995-04-01), Mihara et al.

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