Semiconductor device manufacturing: process – With measuring or testing
Patent
1998-01-07
2000-09-26
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
With measuring or testing
438243, 438386, G01R 3126
Patent
active
061241415
ABSTRACT:
The depth at which the top surface of a buried interface is located is non-destructively determined by FTIR.
REFERENCES:
patent: 4975581 (1990-12-01), Robinson et al.
patent: 5023188 (1991-06-01), Tanaka
patent: 5087121 (1992-02-01), Kakuchi et al.
patent: 5229304 (1993-07-01), Chang et al.
patent: 5392118 (1995-02-01), Wickramasinghe
patent: 5618751 (1997-04-01), Golden et al.
patent: 5627092 (1997-05-01), Alsmeier et al.
FT-IR Spectrometers, FTS 175 and FTS 185, Bio-Rad Laboratories.
Jaiprakash Venkatachalam C.
Muller K. Paul
Infineon Technologies North America Corp.
International Business Machines - Corporation
Jr. Carl Whitehead
Vockrodt Jeff
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