Noble metal activation layer

Details Noble metal activation layer Noble metal activation layer

2011-06-28

2011-06-28

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S613000, C438S626000, C438S643000, C438S655000, C257SE21011

Reexamination Certificate

active

07968462

ABSTRACT:
Processes for minimizing contact resistance when using nickel silicide (NiSi) and other similar contact materials are described. These processes include optimizing silicide surface cleaning, silicide surface passivation against oxidation and techniques for diffusion barrier/catalyst layer deposition. Additionally, processes for generating a noble metal (for example platinum, iridium, rhenium, ruthenium, and alloys thereof) activation layer that enables the electroless barrier layer deposition on a NiSi-based contact material are described. The processes may be employed when using NiSi-based materials in other end products. The processes may be employed on silicon-based materials.

REFERENCES:
patent: 6284721 (2001-09-01), Lee
patent: 2005/0173701 (2005-08-01), Kawase et al.

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