Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2008-04-01
2008-04-01
Chambliss, Alonzo (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S019000, C257S020000, C257S190000, C257S288000, C257SE29193, C438S197000
Reexamination Certificate
active
07351994
ABSTRACT:
At least one high-k device, and a method for forming the at least one high-k device, comprising the following. A structure having a strained substrate formed thereover. The strained substrate comprising at least an uppermost strained-Si epi layer. At least one dielectric gate oxide portion over the strained substrate. The at least one dielectric gate oxide portion having a dielectric constant of greater than about 4.0. A device over each of the at least one dielectric gate oxide portion to complete the least one high-k device. A method of forming the at least one high-k device.
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Chang Tien-Chih
Chen Shih-Chang
Liang Mong-Song
Wang Ming-Fang
Yao Liang-Gi
Chambliss Alonzo
Haynes & Boone LLP
Taiwan Semiconductor Manufacturing Company
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