NMOS field effect transistors and methods of forming NMOS field

Details NMOS field effect transistors and methods of forming NMOS field NMOS field effect transistors and methods of forming NMOS field

1997-02-13

1998-02-24

Tupper, Robert S.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257327, 437 44, 437 29, H01L 2976, H01L 31062, H01L 21265, H01L 31113

Patent

active

057214433

ABSTRACT:
A semiconductor processing method of forming an NMOS field effect transistor includes, a) providing a projecting mesa of semiconductive material from a bulk semiconductor substrate, the mesa defining a semiconductor substrate floor and walls rising upwardly therefrom; b) providing a gate dielectric layer and a gate atop the semiconductive mesa; c) providing a pair of opposing LDD regions within the semiconductive mesa, the respective LDD regions running along one of the mesa walls; and d) providing source and drain diffusion regions within the bulk semiconductor substrate floor which respectively interconnect with the opposing LDD regions of the mesa. NMOS field effect transistors are also disclosed.

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