NMOS device, PMOS device, and SiGe HBT device formed on SOI...

Details NMOS device, PMOS device, and SiGe HBT device formed on SOI... NMOS device, PMOS device, and SiGe HBT device formed on SOI...

2011-05-17

2011-05-17

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257SE27112, C257SE29117

Reexamination Certificate

active

07943995

ABSTRACT:
Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.

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