NMOS device formed on SOI substrate and method of...

Details NMOS device formed on SOI substrate and method of... NMOS device formed on SOI substrate and method of...

2008-03-25

2008-03-25

Pham, Hoai v (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257SE27112, C257SE29117

Reexamination Certificate

active

11019179

ABSTRACT:
Provided are an NMOS device, a PMOS device and a SiGe HBT device which are implemented on an SOI substrate and a method of fabricating the same. In manufacturing a Si-based high speed device, a SiGe HBT and a CMOS are mounted on a single SOI substrate. In particular, a source and a drain of the CMOS are formed of SiGe and metal, and thus leakage current is prevented and low power consumption is achieved. Also, heat generation in a chip is suppressed, and a wide operation range may be obtained even at a low voltage.

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