Nitrous oxide stripping process for organosilicate glass

Details Nitrous oxide stripping process for organosilicate glass Nitrous oxide stripping process for organosilicate glass

2007-04-10

2007-04-10

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S725000, C438S723000, C438S638000, C438S640000, C257SE21214

Reexamination Certificate

active

10680895

ABSTRACT:
A method of stripping an integrated circuit (IC) structure having a photoresist material and an organosilicate glass (OSG) material is described. The method comprises feeding a nitrous oxide (N2O) gas into a reactor, generating a plasma in the reactor and stripping the photoresist. The stripping process provides a high selectivity between the photoresist and the OSG material.

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