Nitrogen semiconductor compound and device fabricated using...

Details Nitrogen semiconductor compound and device fabricated using... Nitrogen semiconductor compound and device fabricated using...

2006-02-27

2010-06-08

Rao, G. Nagesh (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

C117S082000, C117S083000, C117S084000, C117S085000, C117S086000, C117S087000, C117S088000, C257S774000, C257S773000, C257S784000, C257S347000

Reexamination Certificate

active

07731796

ABSTRACT:
Disclosed herein are a novel nitrogen semiconductor compound simultaneously including groups with different electrical properties and a device fabricated using the nitrogen semiconductor compound as an organic semiconductor material or a hole conducting material. The nitrogen semiconductor compound can be spin-coated at room temperature when applied to the fabrication of the device, and has superior electrical conductivity and photovoltaic properties.

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