Nitrogen rich barrier layers and methods of fabrication thereof

Details Nitrogen rich barrier layers and methods of fabrication thereof Nitrogen rich barrier layers and methods of fabrication thereof

2007-06-12

2007-06-12

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S685000, C257SE21070

Reexamination Certificate

active

11057631

ABSTRACT:
Methods of forming barrier layers and structures thereof are disclosed. A nitrogen rich region is formed at a top surface of a barrier layer by exposing the barrier layer to a nitridation treatment. The nitrogen rich region increases the oxidation resistance of the barrier layer. The barrier layers have improved diffusion barrier properties. A stack of barrier layers may be formed, with one or more of the barrier layers in the stack being exposed to a nitridation treatment.

REFERENCES:
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patent: 6284649 (2001-09-01), Miyamoto
patent: 6500761 (2002-12-01), Wajda et al.
patent: 6537621 (2003-03-01), Kobayashi et al.
patent: 2003/0194859 (2003-10-01), Huang

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