Nitrogen-free dielectric anti-reflective coating and hardmask

Details Nitrogen-free dielectric anti-reflective coating and hardmask Nitrogen-free dielectric anti-reflective coating and hardmask

2005-08-09

2005-08-09

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S790000, C438S952000

Reexamination Certificate

active

06927178

ABSTRACT:
Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.

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