Nitrogen-free ARC/capping layer and method of manufacturing...

Details Nitrogen-free ARC/capping layer and method of manufacturing... Nitrogen-free ARC/capping layer and method of manufacturing...

2008-01-01

2008-01-01

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21039, C257SE21029, C438S789000, C438S677000

Reexamination Certificate

active

11112499

ABSTRACT:
The present invention provides a nitrogen-free ARC/capping layer in a low-k layer stack, which, in particular embodiments, is comprised of carbon-containing silicon dioxide, wherein the optical characteristics are tuned to conform to the 193 nm lithography. Moreover, the ARC/capping layer is directly formed on the low-k material, thereby also preserving the integrity thereof during an etch and chemical mechanical polishing process.

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Office Action Dated Mar. 21, 2007 from U.S. Appl. No. 11/035,112.

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