Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-01-01
2008-01-01
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21039, C257SE21029, C438S789000, C438S677000
Reexamination Certificate
active
07314824
ABSTRACT:
The present invention provides a nitrogen-free ARC/capping layer in a low-k layer stack, which, in particular embodiments, is comprised of carbon-containing silicon dioxide, wherein the optical characteristics are tuned to conform to the 193 nm lithography. Moreover, the ARC/capping layer is directly formed on the low-k material, thereby also preserving the integrity thereof during an etch and chemical mechanical polishing process.
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Office Action Dated Mar. 21, 2007 from U.S. Appl. No. 11/035,112.
Frohberg Kai
Muehle Sven
Ruelke Hartmut
Advanced Micro Devices , Inc.
Everhart Caridad
Williams Morgan & Amerson P.C.
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