Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-04-04
2006-04-04
Pham, Thanhha (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S624000, C438S701000
Reexamination Certificate
active
07022602
ABSTRACT:
The effect of resist poisoning may be eliminated or at least substantially reduced in the formation of a low-k metallization layer, in that a nitrogen-containing barrier layer is provided with a surface modified by plasma treatment. Consequently, diffusion of nitrogen and nitrogen compounds in vias formed in the low-k dielectric layer is significantly suppressed, so that in a subsequent photolithography step interaction of nitrogen and nitrogen compounds with the photoresist is remarkably reduced.
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Hohage Joerg
Kiene Michael
Ruelke Hartmut
Werner Thomas
Advanced Micro Devices , Inc.
Pham Thanhha
Williams Morgan & Amerson P.C.
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