Nitrogen-containing heteroaromatic ligand-transition metal...

Organic compounds -- part of the class 532-570 series – Organic compounds – Heterocyclic carbon compounds containing a hetero ring...

Reexamination Certificate

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C313S504000, C428S690000

Reexamination Certificate

active

08053575

ABSTRACT:
Example embodiments provide a nitrogen-containing heteroaromatic ligand-transition metal complex, a buffer layer including the complex, which may improve the injection and transport of electrical charges, an organic thin film transistor and an electronic device including the buffer layer, in which the injection of electrons or holes and the transport of charges between layers are accelerated, thereby improving the efficiency thereof, and methods of manufacturing the same.

REFERENCES:
patent: 7282586 (2007-10-01), Yen et al.

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